A Review of Homoepitaxy of III-Nitride Semiconductors by Metal Organic Chemical Vapor Deposition and the Effects on Vertical Devices
نویسندگان
چکیده
This paper reviews some of the basic issues in homoepitaxial growth III-nitrides to enable a vertical device technology. It focuses on use metal organic chemical vapor deposition (MOCVD) grow GaN and explores effects native substrate characteristics material quality, interface composition, performance. A review theoretical work understanding dopants ultra-wide III-nitride semiconductors, AlN BN, is also included for future efforts expanding technology into those materials.
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ژورنال
عنوان ژورنال: Crystals
سال: 2023
ISSN: ['2073-4352']
DOI: https://doi.org/10.3390/cryst13030387